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600V 60A 0.045 APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction MOSFET
(B)
TO -2 47
D3PAK
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated * Popular TO-247 or Surface Mount D3 Package
(S)
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT60N60B_SCS(G) 600 60 38 230 30 431 3.45 -55 to 150 260 50 11
2 3
UNIT Volts
Amps
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current
2
Volts Watts W/C C V/ns Amps mJ
Repetitive Avalanche Energy
3 1950
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
4
MIN 600
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 44A)
0.045 25 250 100 2.1 3 3.9
Ohms A nA Volts
3-2006 050-7239 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 3mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff tr Qgs Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
5
APT60N60B_SCS(G)
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 44A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 44A @ 25C RG = 3.3
6
MIN
TYP
MAX
UNIT pF
7200 8500 290 150 34 50 30 20 100 10 675 520 1100 635 190
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
6
nC
ns
INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 44A, RG = 4.3 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 44A, RG = 4.3
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 4
MIN
TYP
MAX
UNIT Amps Volts ns C
44 180 1.2 600 17 4
(Body Diode) (VGS = 0V, IS = -44A)
Reverse Recovery Time (IS = -44A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -44A, dl S/dt = 100A/s) Peak Diode Recovery dv/dt
7
/dt
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.29 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting Tj = +25C, L = 33.23mH, RG = 25, Peak IL = 11A 4 Pulse Test: Pulse width < 380s, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 We do not recommend using this CoolMOSTM product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30 , THERMAL IMPEDANCE (C/W) D = 0.9 0.25 0.20 0.15 0.10 0.05 0 0.7
3-2006
0.5
Note:
PDM
050-7239 Rev B
0.3
t1 t2
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
140 120 100 80 60 40 20 0 6.5V
6V
APT60N60B_SCS(G)
15, 10 & 7V
0.143
0.00717
Power (watts)
0.233
0.120
5.5V
0.00391 Case temperature. (C)
0.680
5V
4.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200 180
0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20 1.10 1.00 0.90 0.80
VGS=10V
NORMALIZED TO VGS = 10V @ 44A
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPERES)
160 140 120 100 80 60 40 20 0
TJ = -55C
TJ = +25C
TJ = +125C
VGS=20V
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
ID, DRAIN CURRENT (AMPERES)
50 40 30 20 10 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
60
1.15
20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
I = 44A
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.15
0.90 -50
V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
= 10V
1.10 1.05 1.00 0.95 0.90 3-2006 050-7239 Rev B 0.85 0.80 0.75 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.70 -50
1.5
1.0
0.5
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 -50
230 ID, DRAIN CURRENT (AMPERES) 100 50
OPERATION HERE LIMITED BY R (ON) DS
105
APT60N60B_SCS(G)
104 C, CAPACITANCE (pF)
Ciss
103 Coss 102
100S 10 5 TC =+25C TJ =+150C SINGLE PULSE
1mS
10mS
101 100
Crss
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
1
0 50 100 150 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = 44A
D
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16 14 12 10 8 6 4 2 0
0
200 100
TJ =+150C TJ =+25C
VDS=120V VDS=300V
10
VDS=480V
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 250
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 110
100
V
DD G
= 400V
R
= 4.3
200
90
td(on) and td(off) (ns)
td(off)
V
DD G
80
T = 125C J L = 100H
= 400V
tr and tf (ns)
150
70 60 50 40 30
tf
R
= 4.3
100
T = 125C J L = 100H
50
td(on)
0
20 10 0
tr
0
20
FIGURE 14, DELAY TIMES vs CURRENT
2000
V
DD G
40 ID (A)
60
80
0
20
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
40 ID (A)
60
80
= 400V
R
= 4.3
T = 125C
SWITCHING ENERGY (J)
1500
L = 100H E diode reverse recovery.
on
SWITCHING ENERGY (J)
J
2000
Eoff
includes
Eon
1500
Eon
1000
1000
V
DD
3-2006
Eoff
= 400V
500
I = 44A
D
500
T = 125C L = 100H E diode reverse recovery.
on J
050-7239 Rev B
includes
40 60 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
20
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90%
10% Gate Voltage TJ125C
APT60N60B_SCS(G)
Gate Voltage
TJ125C
td(on)
tr
90%
td(off)
Drain Current
tf
Drain Voltage
90%
5%
10%
Drain Voltage
10% 0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DQ60
VDD
ID
VDS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
e3 100% Sn
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7239 Rev B
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
3-2006
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055)
3.81 (.150) 4.06 (.160) (Base of Lead)

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